InP DHBT Process in Transferred-Substrate Technology With f_t and f_max Over 400 GHz

Published in:
IEEE Trans. Electron Devices, vol. 56, no. 9, pp. 1897-1903 (2009).
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Abstract:
In this paper, a double heterojunction bipolar transistor (DHBT) process has been developed in transferred-substrate (TS) technology to optimize high-frequency performance. It provides an aligned lithographic access to frontside and backside of the device to eliminate dominant transistor parasitics. The transistors of 0.8 × 5-µm² emitter mesa feature f_t = 410 GHz and f_max = 480 GHz at a BV_ceo = 5.5 V. Parallel to the device setup, a multilevel metallization scheme is established. It serves as construction kit for 3-D configurations of active and passive elements. High yield of the TS DHBTs, consistent large-signal modeling, and accurate simulation of complex passive elements have been demonstrated and have proved the availability of the technology for advanced millimeter-wave circuit design.

Index Terms:
Device fabrication, device modeling, InP heterojunction bipolar transistors (HBTs), microstrip components, wafer bonding.

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