Carrier injection in InAlGaN single and multi-quantum-well ultraviolet light emitting diodes

T. Kolbe¹, T. Sembdner¹, A. Knauer², V. Kueller², H. Rodriguez², S. Einfeldt², P. Vogt¹, M. Weyers², and M. Kneissl^1,2

¹ Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
² Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Published in:
phys. stat. sol. (c), early view (2010).
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Abstract:
316 nm (In)AlGaN light emitting diodes (LEDs) with one, three, five and seven quantum wells (QWs) have been investigated. The carrier injection in the devices is simulated and compared with electroluminescence measurements. The emission power of all LEDs is nearly the same at low currents. This effect is attributed to the inhomogeneous carrier distribution in the QWs of the multi-quantum-well (MQW) structures. Only the first two QWs closest to the p-side of the diode contribute significantly to the optical emission.

Keywords:
InAlGaN, MOVPE, quantum wells, electroluminescence, LEDs, modeling

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