 |
(In)AlGaN deep ultraviolet light emitting diodes with optimized quantum well width
T. Kolbe1, T. Sembdner1, A. Knauer2, V. Kueller2, H. Rodriguez2, S. Einfeldt2, P. Vogt1, M. Weyers2, and M. Kneissl1,2
1 Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Published in:
phys. stat. sol. (a), vol. 207, no. 9, pp. 2198-2200 (2010).
© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Personal use of this material is permitted. However, permission to reprint/republish this material for
advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists,
or to reuse any copyrighted component of this work in other works must be obtained from the WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Abstract:
The effect of the quantum well (QW) width on the light output
and efficiency of ultraviolet (UV) light emitting diodes (LEDs)
has been investigated. The carrier injection in the devices is
simulated and compared with electroluminescence (EL)
measurements. The light output power depends clearly on the
QWthickness. The highest output power has been found for the
LEDs with aQWthickness of 2.2 nm. This effect is attributed to
the trade-off between electron and hole wave function overlap
and carrier concentration in the active region which are
triggered by the quantum confined Stark effect.
Keywords:
electroluminescence, InGaAlN, light emitting diodes, quantum wells
Full version in pdf-format.
|
|
