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InGaN-GaN Disk Laser for Blue-Violet Emission Wavelengths
R. Debusmann1, N. Dhidah2, V. Hoffmann3, L. Weixelbaum3, U. Brauch2, T. Graf2, M. Weyers3, and M. Kneissl1,3
1 Institut für Festkörperphysik, TU Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
2 University of Stuttgart, Institut für Strahlwerkzeuge, 70569 Stuttgart, Germany
3 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Published in:
IEEE Photonics Technol. Lett., vol. 22, no. 9, pp. 652-654 (2010).
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Abstract:
An optically pumped InGaN-GaN surface-emitting
laser with external cavity emitting at 393 nm has been realized.
The peak output power is 300W, the slope efficiency 3.5%, and the
threshold pump power density 700 kW/cm2. Critical parameters
in the design of the laser will be discussed and ways to improve the
performance will be suggested.
Index Terms:
Gallium compounds, indium compounds, nitrogen compounds, optical pumping, quantum-well (QW) lasers,
semiconductor lasers.
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