High Power 1060 nm Ridge Waveguide Lasers with Low-Index Quantum Barriers for Narrow Divergence Angle

A. Pietrzak, P. Crump, H. Wenzel, F. Bugge, G. Erbert, and G. Tränkle

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Published in:
Conf. on Lasers and Electro-Optics (CLEO/QELS), San Jose, CA, May 16-21, paper CWE2 (2010).
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Abstract:
Combining low-index quantum-barriers with thick (8.6 µm) waveguide in a multi-QW 1060-nm epi-structure enabled a vertical divergence of <9°. 30 W broad-area and 0.8 W single-transverse-mode operation ridge-waveguide devices are demonstrated using these vertical designs.

OCIS Codes:
(250.5960) Semiconductor lasers; (250.5590) Quantum-well, -wire and -dot devices

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