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GaN RF Oscillator Used in Space Applications
H. Mostardinha1, P.M. Cabral1, N.B. Carvalho1, P. Kurpas2, M. Rudolph3, J. Würfl2, J.C. Pinto4, A. Barnes5, and F. Garat5
1 Instituto de Telecomunicações - Universidade de Aveiro, Campus Universitário de Santiago, 3810-193, Aveiro, Portugal
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
3 Ulrich-L.-Rohde Chair for RF and Microwave Techniques, Brandenburg University of Technology,Cottbus, Germany
4 EFACEC Sistemas de Electrónica, S. A.- Aerospace Activity Manager R. Eng. Frederico Ulrich, apartado 3078, 4471-907 Moreira Maia, Portugal
5 ESA/ESTEC European Space Research and Technology Center, Keplerlaan 1- P.O. Box 299 2200 AG, Noordwijk ZH, The Netherlands
Published in:
Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC 2010), Goteborg, Sweden, April 26-27, pp. 50-53 (2010).
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Abstract:
This paper reports the design and implementation
of a RF GaN Oscillator for test in space. This circuit/system will
be applied in a space test of the European Space Agency and it
will be one of the first experiments in space using European GaN
devices. The main objective will be to study the material
radiation hardness. In this paper we will present the proposed
circuit for test and its main design procedure.
Index Terms:
Gallium Nitride, Oscillator, Resonator.
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