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Stable and reproducible AlGaN/GaN-HFET processing highly tolerant for epitaxial quality variations
P. Kurpas1, I. Selvanathan1, M. Schulz1, H. Sahin2, P. Ivo1, M. Matalla1, J. Splettstoesser2, A. Barnes3, J. Würfl1
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 United Monolithic Semiconductors GmbH, Wilhelm-Runge-Str. 11, 89081 Ulm, Germany
3 ESA/ESTEC, Keplerlaan 1 P.O. Box 299, 2200 AG Noordwijk ZH, The Netherlands
Published in:
Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2010), Portland, USA, May 17-20, pp. 141-144 (2010).
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Abstract:
AlGaN/GaN HFETs have been fabricated on epitaxial
wafers, using nominally an identical epitaxy
procurement specification, procured from 9 different
vendors worldwide. A stable and reproducible device
processing technology was established in order to allow
the performance attributes of the epitaxial wafers to be
benchmarked. In order to obtain a fair vendor
comparison, the processing modules were modified such
that processing could be relaxed to allow fabrication on
wafers with varying quality. On the example of the effect
of wafer warp it is shown that especially gate technology
has had to be adapted: non-optimized gate profiles lead
to higher leakage currents and worse reliability
performance. Results from on-wafer test structures and
device performances verified differences in material
qualities and allowed for reliable vendor benchmarking.
Keywords:
AlGaN/GaN HFET, HEMT, processing reproducibility issues, gate technology, benchmarking epitaxy
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