Determining GaN HEMT Trap Models from MHz Load-line Measurement — A Case Study
M. Rudolph1,2, P. Beleniotis1, C. Zervos1, U.L. Rohde1, and C. Andrei1
Published in:
15th German Microwave Conference (GeMiC 2024), Duisburg, Germany, Mar 11-13, ISBN 978-3-9820397-3-2, pp. 29-32 (2024).
Abstract:
GaN HEMTs are known to suffer from trapping effects that lead to a reduction in current density depending on previously applied drain voltages. Characterization of the effect currently requires expensive fast-pulsed voltage supplies that can be synchronized with measurement. We propose a method that provides basically the same information based on a dynamic load-line measurement in the lower MHz range, speeding up the measurement process and reducing equipment cost. This paper presents a case study based on simulation of a proven advanced GaN HEMT model in order to explore the general feasibility of the concept.
1 Brandenburg University of Technology Cottbus, Germany
2 Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik Berlin, Germany
Index Terms:
Compact transistor modeling, GaN, model parameter extraction, ASM-HEMT
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