Materials Technology

As a competence center for metalorganic vapor phase epitaxy (MOVPE), we produce ultrathin semiconductor layer structures with precisely defined crystalline properties. We use the material systems (Al,Ga)As, (Al,Ga,In)P, (Ga,In)(As,P) und (Al,Ga,In)N and suitable dopants to realize conductivities, refractive index and band gap profiles as well as absorption and emission characteristics in the UV, visible, and near-infrared wavelength range. These wafers can then be further processed into electronic or optoelectronic devices.

We monitor the development and optimization of devices using a variety of analytical methods, focusing on optical, electrical, and structural characteristics. The analytical methods are also used to analyse degradation and failure causes of devices.

Epitaxy arsenides & phosphides

Laser structures for high power and high brilliance, saturable absorbers, VCSEL & VECSEL, tunnel diodes, two step epitaxy for 2D and 3D structuring

Epitaxy group III-nitrides

AlN templates (HTA, HVPE) with low dislocation densities, layer structures for UV LEDs and blue-violet laser diodes, field-effect transistors

Materials analytics

Electron microscopy, X-ray analysis, luminescence, transmission & reflection, conductivity, device characterization, degradation and failture analysis

We also use our technological infrastructure for orders from external partners, for example by providing process modules, supplying epitaxial structures or developing and manufacturing device demonstrators.

Services

Rules for the search

Only words with 2 or more characters are accepted
Max 200 chars total
Space is used to split words, "" can be used to search for a whole string (not indexed search then)
AND, OR and NOT are prefix words, overruling the default operator
+/|/- equals AND, OR and NOT as operators
All search words are converted to lowercase