2. Research
  3. III-V Technology
  4. Mounting & Assembly
  5. Mounting of III/V electronic devices

Mounting of III/V electronic devices

The FBH mounts single GaN-microwave transistors with powers up to 100 W as well as MMICs (up to the mm-wavelength range) which have been processed in-house. The devices are characterized, aged, and delivered to cooperating partners. Furthermore GaN/GaO power devices for Joint Lab Power Devices and state-of-the-art THz GaN- and InP-devices were assembled for module application.

Floating-Ground RF Power GaN-HEMT
Floating-Ground RF Power GaN-HEMT
Hybrid integrated GaN half bridge
Hybrid integrated GaN half bridge
Digital GaN power amplifier
Digital GaN power amplifier
GaN based half bridge for current inverter
GaN based half bridge for current inverter
GaN based THz camera chip
GaN based THz camera chip

Challenges in the assembly of these devices

  • Thermal management in power components (ensuring of a low thermal resistance)
  • Packaging for high powers and high frequencies simultaneously (handling of high currents, avoiding of parasitic effects)
  • Electrical stability (oscillation free)
  • Wire bonding with high current load of the bonds

Please find further technical details and performance figures on electronic devices from the FBH here.