2. Research
  3. III-V Electronics
  4. Technologies & Processes

Technologies & Processes

In III-V electronics, we work closely with our Materials Technology, Process Technology and Mounting & Assembly departments – providing the corresponding expertise and resources in-house. This gives us a key role in the development of tomorrow's electronics. With our GaN and InP process technology, we provide state-of-the-art platforms to realize dedicated circuits for advanced transmitter and receiver concepts.

Moreover, we are a Velektronik partner, a project aiming to provide a platform for "trustworthy electronics".

We operate the following processes

GaN-Based Microwave Processes

customized GaN MMICs for X- & Ka-band, integration of active & passive components, special iridium gate technology

Indium Phosphide HBT Process

MMICs, transfer substrate & triple mesa process versions, transit frequencies up to 500 GHz
InP on BiCMOS Wafer

InP-BiCMOS Heterointegration

InP-on-BiCMOS heterointegration on wafer level, combining InP-DHT with SiGe-BiCMOS

Power-Electronic Processes (Wide Bandgap)

normally-off lateral 650 V GaN switching transistors, monolithic integration of compact half bridges, AlN-based transistor technology for voltages up to 1200 V