Wide-Bandgap Electronics Department
We develop and research high-frequency and power electronic devices based on the wide-bandgap semiconductors GaN, AlN und Ga2O3.
Flip-chip mounted GaN power transistor
Normally-off 60 mOhm / 600 V GaN transistor chip (4.4 x 2.3 mm2)
Setup for microwave life-time testing
High-speed field-effect devices
Our AlGaN/GaN heterostructures enable high-speed field-effect devices with simultaneously high current-carrying capacity and breakdown voltage. We use them for novel microwave power devices:
- Discrete GaN power transistors for applications in the L- to C-band - these are used in our microwave plasma sources, among others.
- GaN MMICs for the X-band - these are used in our digital power amplifiers, among other things.
- We are currently developing Ka-band MMICs as part of the European project SGAN-Next and the ESA project Kassiopeia.
High-voltage power switching transistors
GaN, AlN and Ga2O3-based high-voltage power switching transistors enable efficient power converters with increased power density. We are currently developing
- normally-off lateral GaN switching transistors up to 650 V
- monolithically integrated half bridges
- vertical GaN switching transistors up to 1200 V
- lateral AlN transistors up to 1200 V
- lateral and vertical Ga2O3 transistors up to 1200 V
- hybrid integrated fast switching power cores
Measurements & simulation
The basis for our developments are dedicated measurement techniques and simulation methods for power transistors. These include dynamic characterization techniques, various simulation tools and reliability analyses. Our focus is on
- Device simulations: physically oriented as well as thermal and mechanical
- Device characterization: comprehensive characterization of dynamic properties including heat distribution over extended power transistors and their thermal impedance
- Reliability analysis with customized test routines