Wide-Bandgap Electronics Department

We develop and research high-frequency and power electronic devices based on the wide-bandgap semiconductors GaN, AlN und Ga₂O₃.

Flip-chip mounted GaN power transistor with a cent coin for size comparison — Flip-chip mounted GaN power transistor

Normally-off gallium nitride transistor chip featuring small dimensions of only 4.4 by 2.3 millimeter — Normally-off 60 mOhm / 600 V GaN transistor chip (4.4 x 2.3 mm²)

Setup for microwave life-time testing, comprising several devices. — Setup for microwave life-time testing

Our AlGaN/GaN heterostructures enable high-speed field-effect devices with simultaneously high current-carrying capacity and breakdown voltage.

We use them for novel microwave power devices:

Discrete GaN power transistors for applications in the L- to C-band - these are used in our microwave plasma sources, among others.
GaN MMICs for the X-band - these are used in our digital power amplifiers, among other things.
We are currently developing Ka-band MMICs as part of the European project SGAN-Next and the ESA project Kassiopeia.

GaN, AlN and Ga₂O₃-based high-voltage power switching transistors enable efficient power converters with increased power density.

We are currently developing

The basis for our developments are dedicated measurement techniques and simulation methods for power transistors. These include dynamic characterization techniques, various simulation tools and reliability analyses.

Our focus is on

Device simulations: physically oriented as well as thermal and mechanical
Device characterization: comprehensive characterization of dynamic properties including heat distribution over extended power transistors and their thermal impedance
Reliability analysis with customized test routines

Wide-Bandgap Electronics Department

High-speed field-effect devices

High-voltage power switching transistors

Measurements & simulation