2. About us
  3. Structure
  4. Labs & Departments
  5. III-V Electronics
  6. RF Power Lab

RF Power Lab

The focus of our RF Power Lab is on applications with output powers in the range of 10...200 W in the microwave range below 12 GHz. Most projects use FBH packaged GaN HEMT transistors with 0.5 µm gate length. For the integrated power amplifier designs up to X-band we use FBH's 0.25 µm GaN MMIC technology.

A focus is on novel concepts to increase efficiency in broadband modulated power amplifier systems for modern telecommunication signals with high peak-to-average power ratios. In particular, we investigate system types based on load & supply voltage modulation. In addition, we research general issues in RF GaN power transistor technology.

Demonstrator chip of an envelope tracking system
Demonstrator chip of an envelope tracking system (reverse buck converter concept)