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  6. Joint Lab Power Electronics

Joint Lab Power Electronics

The Joint Lab Power Electronics is a cooperation of FBH with the Department of Power Electronics at the Institute of Energy and Automation Technology at TU Berlin. Here, we crosslink technological development of GaN power switching technology at FBH with power-electronic circuit architectures and the corresponding characterization technologies - an expertise of TU Berlin.  By combining expertise in circuit architecture and GaN transistor technology, the outstanding properties of new semiconductor materials can be optimally exploited by means of matched technologies. We thus aim at highly efficient, compact and lightweight energy converters.

Hybrid integrated half bridge with GaN transistors and GaN diodes
Hybrid integrated half bridge with GaN transistors and GaN diodes