Digital GaN-based Transceiver Module for Future Green 5G Networks
M. Krishnaji Rao1, A. Wentzel1, T. Hoffmann1, L. Schellhase1, S.A. Chevtchenko1, M. Rudolph1,2
Published in:
Proc. 54th European Microwave Conference (EuMC 2024), Paris, France, Sep. 24-26, ISBN: 978-2-87487-077-4, pp. 136-139 (2024).
Abstract:
This paper introduces a novel GaN-based digital transceiver (TRx) concept for 5G applications, featuring a low-noise amplifier with integrated switching capability (LNAiS) and a true digital class-E power amplifier (PA) on one single chip. The LNAiS employs two common-gate stages that can be switched from low-noise amplification to high isolation mode. Thereby, a usual antenna switch can be omitted, reducing module complexity and required chip size. In Rx-mode, the LNA shows a gain of 12.7 dB and a low noise figure of 3 dB at 4.7 GHz. In OFF state, i.e. Tx-mode, it provides an isolation of more than 20 dB for 4.7 GHz to 7.4 GHz. In this mode, the very compact and flexible digital class-E PA achieves efficiencies of 46% and 23% for 20 MHz 6.5 dB LTE and 9 dB OFDM signal at 4.7 GHz center frequency, respectively. For 240 MHz 10 dB PAPR OFDM input signal, the PA reaches 22% efficiency. The proposed concept enables a very compact and flexible TRx for future 5G networks targeting a greener ICT.
1 Ferdinand Braun Institut (FBH), Berlin, Germany
2 Chair of Radio Frequency and Microwave Techniques – Ulrich-L.-Rohde Endowed Professorship, Brandenburg University of Technology Cottbus-Senftenberg (BTU), Germany
Keywords:
GaN, HEMT, MMIC, transceiver, FEM, LNA, PA, digital, PWM, class-E, 5G.
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