Dual-Wavelength Master Oscillator Power Amplifier Diode-Laser System at 785 nm
M. Maiwald, A. Klehr, B. Sumpf, G. Erbert, and G. Tränkle
Published in:
IEEE Photonics Technol. Lett., vol. 26, no. 11, pp. 1120-1123 (2014).
Abstract:
A dual-wavelength master oscillator (MO) power amplifier (PA) diode-laser system emitting at 785 nm suitable for shifted excitation Raman difference spectroscopy is presented. The laser system consists of a distributed Bragg reflector Y-branch diode laser as a dual-wavelength MO and a ridge waveguide PA. The system reaches an optical output power of more than 750 mW at 25 °C. Optical spectra show wavelength stabilized single mode emission at 784.60 and 785.22 nm over the whole power range with a spectral width ≤10 pm (≤0.5 cm-1) and a spectral distance of 0.62 nm (≤10.1 cm-1).
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Index Terms:
Diode lasers, semiconductor lasers, DBR, Y-branch, Raman spectroscopy, shifted excitation Raman difference spectroscopy, SERDS, 785 nm.
© Copyright 2014 IEEE - All Rights Reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Full version in pdf-format.