Editorial
P. Crump1, L. Mawst2, S. Mcdougall3, S. Noda4, S. Reitzenstein5, S. Sweeney6, E. Tournie7, Y. Wan8
Published in:
IEEE J. Sel. Top. Quantum Electron., vol. 31, no. 2: Pwr. and Effic. Scaling in Semiconductor Lasers, art. 1502512 (2025).
Abstract:
After initial proof-of-concept demonstrations, power- and efficiency-scaling are a central goal of semiconductor laser development, for broad societal benefits, reducing energy consumption and enabling new applications, and rapid progress is currently seen in a wide range of semiconductor lasers, enabled by new insights from studies in device physics and material science and by innovation in device design, materials and technology.
1 Ferdinand-Braun-Institut, Berlin, Germany
2 University of Wisconsin-Madison, USA
3 Trumpf GmbH, Germany
4 Kyoto University, Japan
5 Technische Universitt Berlin, Germany
6 University of Glasgow, UK
7 University of Montpellier, France
8 King Abdullah University of Science and Technology Saudia Arabia, Saudia Arabia
Index Terms:
Device Physics
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