J.-P. Koester, H. Wenzel, J. Fricke, M. Reggentin, P. Della Casa, P. Sammeta, O. Brox, M. Ekterai, M. Kohlbrenner, A. Renkewitz, C. Zink, T. Tenzler, J. Boschker, M. Weyers, and A. Knigge

Published in:

APL Photon., vol. 9, no. 10, pp. 106102, doi:10.1063/5.0223134 (2024).

Abstract:

This paper reports on a monolithically integrated gallium arsenide (GaAs)-based photonic integrated circuit platform for wavelengths around 1064 nm. Enabled by spatially selective quantum well removal and two-step epitaxial growth, it supports on-chip gain as well as passive waveguides. In addition, shallow- and deep-etched waveguides are realized. The former result in waveguide losses of less than 2 dB/cm, while the latter enable compact integrated waveguide components. To demonstrate the performance of the platform, racetrack ring resonators based on deep-etched Euler bends and shallow-etched directional couplers are realized, achieving high intrinsic quality factors of 2.6 × 10⁵ and 3.2 × 10⁵ for the fundamental TE and TM mode, respectively. To demonstrate the use of these resonators, ring-resonator-coupled lasers are fabricated, resulting in one-sided output powers of up to 14 mW and single-mode operation with 40 dB side-mode suppression. The successful integration of ring resonators on a GaAs-based active/passive photonic integrated circuit platform paves the way for the realization of fully monolithic, widely tunable, and narrow linewidth ring-resonator-coupled laser sources.

Topics:

Electrical properties and parameters, Resonator device, Wave propagation, Epitaxy, Optoelectronic devices, Quantum wells, Lasers, Amplified spontaneous emission, Photonic integrated circuits, Semiconductors

© 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). https://doi.org/10.1063/5.0223134.

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