B. King, S. Arslan, A. Boni, P.S. Basler, C. Zink, P. Della Casa, D. Martin, A. Thies, A. Knigge and P. Crump

Published in:

Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2023), Munich, Germany, Jun. 26-30, ISBN: 979-8-3503-4599-5, cb-11-1 (2023).

Abstract:

Increased optical output power Popt from single broad area GaAs-based diode lasers is demanded for material processing, with higher P_opt and cost reduction in €/W enabled by using devices with ever-wider apertures [1]. Device structures suitable for single emitters with very large footprints (> 4 mm²) that sustain high P_opt and conversion efficiency ηE without exciting unwanted optical modes (e.g. ring oscillations) are also of interest as an enabling technology for high power photonic crystal surface emitting lasers [2]. We report here progress in broad area diode lasers with resonator length L = 4 mm and emitting aperture of W = 1200 µm with wavelength λ = 915 nm.

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