Influence of On-Wafer Parasitic Effects on Mason’s Gain of Down-Scaled InP HBTs
A. Kanitkar#, R. Doerner#, T.K. Johansen$, W. Heinrich#, T. Flisgen#
Published in:
Proc. 54th European Microwave Conference (EuMC 2024), Paris, France, Sep. 24-26, ISBN: 978-2-87487-077-4, pp. 252-255 (2024).
Abstract:
The determination of Mason’s gain is associated with various problems for down-scaled millimeter-wave and sub-THz transistors, which compromises the reliability of the extracted maximum frequency of oscillation. In this work, we investigate the influence of on-wafer parasitic effects introduced by neighboring structures and probes on Mason’s gain. A full-wave 3D electromagnetic simulation environment is applied for this purpose. Furthermore, a fabricated down-scaled InP HBT with 300nm emitter width is considered. The simulated and measured raw scattering parameters for the 300 nm InP HBT are corrected by applying an 8-term error model of the calibration technique. The systematic analysis of on-wafer parasitic effects reveals that the parasitic probe-to-probe coupling, even it is weak, is a source of peculiarities in Mason’s gain in case of 8-term correction, whereas the influence of the neighboring structures remains negligible.
# Ferdinand Braun Institut (FBH), Berlin, Germany
$ Technical University of Denmark, Denmark
Keywords:
InP HBT, Mason’s gain determination, On-wafer parasitic effects, 8-term error model.
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