S. Haque¹, P. Beleniotis¹, H. Yazdani², M. Rudolph^1,2

Published in:

25th International Microwave and Radar Conference (MIKON), Wroclaw, Poland, Jul. 1-4, ISBN 978-83-969726-1-3, pp. 1-5 (2024).

Abstract:

This work presents power amplifiers with integrated features like DC supply switch for reducing the power consumption in receive mode of an RF front end (RFFE) module and RF switch for compact RFFE module design. Two 28–32 GHz power amplifiers, one with only DC supply switch and the other with both DC supply switch and RF SPST switch, are designed and fabricated using 0.15 µm GaN-on-SiC technology. The PA with DC supply switch shows a measured small-signal gain of 11–12.7 dB at 28–32 GHz, P_sat of 31 dBm and PAE_peak of 24% at 30 GHz. The PA with DC supply switch and RF SPST switch, on the other hand, exhibits a measured small-signal gain of 9.2–11.6 dB at 28–32 GHz, P_sat of 29.5 dBm and PAE_peak of 15% at 30 GHz. In the receive mode, the measurements show a power consumption of only 20 mW (instead of 2 W in transmit mode), port-to-port isolation of more than −27 dB and S₂₂ higher than −3 dB at 28–32 GHz highlighting the effectiveness of integrated DC and RF switch.

Index Terms:

DC supply switch, GaN HEMT, integrated switch, Ka-band, power amplifier, RF switch.

©2024 Warsaw University of Technology

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