K/Ka-Band–GaN–High-Electron-Mobility Transistors Technology with 700 mS mm-1 Extrinsic Transconductance
H. Yazdani1, P. Beleniotis2, F. Brunner1, I. Ostermay1, J. Würfl1, M. Rudolph1,2, W. Heinrich1, and O. Hilt1
Published in:
phys. stat. sol. (a), vol. 222, no. 3, pp. 2400592, doi:10.1002/pssa.202400592 (2025).
Abstract:
In this study, the impacts of fabrication technology and epitaxial layer design on the transconductance (gm) of radio frequency AlGaN/GaN high-electron-mobility transistors (HEMTs) are examined. Optimization of the SiNx passivation and AlGaN barrier design of 150 nm gate HEMTs enhances the extrinsic (at Vds = 10 V) and intrinsic (at Vds = 15 V) transconductance from ≈0.47/0.65 to ≈0.62/1.1 S mm-1. Notably, an extrinsic gm of 0.70 S mm-1 at Vds = 5 V is achieved, setting a new benchmark for the extrinsic transconductance of AlGaN/GaN HEMTs designed for the K/Ka frequency range with a breakdown voltage exceeding 100 V.
1 Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik (FBH), 12489 Berlin, Germany
2 Chair of Radio Frequency and Microwave, Brandenburg University of Technology Cottbus-Senftenberg, 03013 Cottbus, Germany
Keywords:
2D electron gases, GaN high-electron-mobility transistors, transconductances (gm)
© 2024 The Author(s). physica status solidi (a) applications and materials science published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution-NonCommercial-NoDerivs License, which permits use and distribution in any medium, provided the original work is properly cited, the use is non-commercial and no modifications or adaptations are made.
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