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MOVPE growth of tunable DBR laser diode emitting at 1060 nm

F. Bugge, A. Knauer, U. Zeimer, J. Sebastian, V.B. Smirnitski, A. Klehr, G. Erbert, M. Weyers

Published in:

J. Cryst. Growth, vol. 195, no. 1-4, pp. 676-680 (1998).

Abstract:

Tunable laser diodes emitting at 1060 nm have been grown by metalorganic vapor-phase epitaxy (MOVPE). For the growth of the highly strained InGaAs/GaAs quantum well (QW) high growth rates are found favorable to suppress defect formation. Laser diodes using such QWs in GaAs waveguide and AlGaAs cladding layers show very low threshold (jth=104 mA) and transparency current densities (jT=53 A cm−2). These low values are preserved when the growth is interrupted after the upper GaAs waveguide and a grating is processed. Three sectional laser diodes having a distributed Bragg reflector grating section, a phase shift and a gain section have a very small linewidth of 0.85 MHz at 30 mW and a tuning range of 300 GHz.

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Rudower Chaussee 5, D-12489 Berlin, Germany

Keywords:

MOVPE; Strained InGaAs-QW; DBR laser diode

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