Narrow linewidth micro-integrated high power diode laser module for deployment in space
H. Christopher1, B. Arar1, A. Bawamia1, Ch. Kürbis1, W. Lewoczko-Adamczyk1,3, M. Schiemangk1, R. Smol1, A. Wicht1, A. Peters1,2, and G. Tränkle1
Published in:
IEEE International Conference on Space Optical Systems and Applications (ICSOS 2017), Naha, Japan, Nov. 14-16, pp. 150-153 (2017).
Abstract:
Semiconductor laser technology has shown to be a promising alternative to other laser technologies, e.g. solid state lasers, for employment in coherent satellite communication and fundamental physics applications. Being compact, robust, energy- and cost-efficient these semiconductor lasers fulfill the key mandatory requirements for deployment in space. At the Ferdinand-Braun-Institut, we have developed a versatile technology platform for integration of any two semiconductor chips, be they active (e.g. laser, amplifier) or passive (e.g. Phase modulator), in a fiber coupled laser module wherein all components are either space qualified or space compatible. Here we present a narrow linewidth high power laser module based on this platform that will be used in an iodine-based optical reference onboard a sounding rocket. We discuss its electro-optical performance. We further give an outlook on an ultra-narrow linewidth technology demonstrator laser module.
1 Joint Lab Laser Metrology , Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik , Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
2 Optical Metrology Group, Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, 12489 Berlin, Germany
3 present address: Abt. SIIT/Optical Interconnection Technology, Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration (IZM), Gustav-Meyer-Allee 25, 13355 Berlin, Germany
Keywords:
semiconductor laser; extended-cavity diode laser; external cavity diode laser; master oscillator power amplifier; linewidth; high power; laser module; space.
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