I. Ostermay, S. Seifert, and O. Krueger

Published in:

Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2023), Orlando, USA, May 15-18, p. 10.3 (2023).

Abstract:

Sputtered iridium films are the key element of FBH´s unique Schottky metal gate technology for AlGaN/GaN HEMT devices. Due to the piezoelectric properties of the AlGaN/GaN system, the metal deposition in the gate trench needs to be conformal and of low mechanical stress. In this paper we give a detailed insight into the sputtering parameters used for the deposition of the iridium gate metal and analyze the influencing factors like the working gas pressure, target-to-substrate distance, and static vs. rotating sputter mode on thin-film properties such as stress and electrical resistivity.

Keywords:

sputter deposition, iridium gate, GaN HEMT, strain engineering, mechanical stress

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