N. Kafi^a, S. Kang^a, C. Golz^a, A. Rodrigues-Weisensee^a, L. Persichetti^b, D. Ryzhak^c, G. Capellini^c,d, D. Spirito^c, M. Schmidbauer^e, A. Kwasniewski^e, C. Netzel^f, O. Skibitzki^c, and F. Hatami^a

Published in:

Cryst. Growth Des., vol. 24, no. 7, pp. 2724−2733, doi:10.1021/acs.cgd.3c01337 (2024).

Abstract:

Gallium phosphide (GaP) is a III−V semiconductor with remarkable optoelectronic properties, and it has almost the same lattice constant as silicon (Si). However, to date, the monolithic and large-scale integration of GaP devices with silicon remains challenging. In this study, we present a nanoheteroepitaxy approach using gas-source molecular-beam epitaxy for selective growth of GaP islands on Si nanotips, which were fabricated using complementary metal−oxide semiconductor (CMOS) technology on a 200 mm n-type Si(001) wafer. Our results show that GaP islands with sizes on the order of hundreds of nanometers can be successfully grown on CMOS-compatible wafers. These islands exhibit a zinc-blende phase and possess optoelectronic properties similar to those of a high-quality epitaxial GaP layer. This result marks a notable advancement in the seamless integration of GaP-based devices with high scalability into Si nanotechnology and integrated optoelectronics.

Subjects:

Crystals, Epitaxy, Layers, Silicon, Thickness

Copyright © 2024 The Authors. Published by American Chemical Society. This publication is licensed under CC-BY 4.0.

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