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Transfer Printing of GaAs-based Amplifiers on a-Si:H Waveguides for Evanescently-Coupled Light Amplification in the Near-Infrared Band

K. Akritidis1,2,4, M. Billet1,2, M. Kiewiet1,2, J. Fricke3, H. Wenzel3, J.-P. Koester3, A. Knigge3, P. Neutens4, R. Jansen4, J. Brouckaert4, P. Van Dorpe4, M. Weyers3 and B. Kuyken1,2

Published in:

Conf. on Lasers and Electro-Optics (CLEO 2024), Charlotte, USA, May 5-10, ISBN 978-1-957171-39-5, p. SM3G.4, doi:10.1364/CLEO_SI.2024.SM3G.4 (2024).

Abstract:

We demonstrate 7-dB light amplification at 921 nm by transfer-printing a GaAs-based amplifier on a a-Si:H waveguide. This paves the way towards the development of evanescently-coupled integrated laser systems on SiN emitting in the near-infrared.

1 Photonics Research Group, INTEC Department, Ghent University - imec, 9052 Ghent, Belgium
2 Center for Nano- and Biophotonics, Ghent University, Belgium
3 Ferdinand-Braun-Institut (FBH), 12489 Berlin, Germany
4 IMEC, Kapeldreef 75, 3001 Heverlee, Belgium

Copyright © 2024 The Author(s).
© Optica Publishing Group 2024 Open Access Statement and Policy, Terms for Journal Article Reuse.

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