Vertical GaN-on-Tungsten High Voltage pn-Diodes From Sapphire-Grown GaN Membranes
E. Brusaterra1, E. Bahat Treidel1, L. Deriks2, S. Danylyuk2, E. Brandl3, J. Bravin3, M. Pawlak3, A. Külberg1, M. Schiersch1, A. Thies1, and O. Hilt1
Published in:
IEEE Electron Device Lett., vol. 46, no. 4, pp. 564-567 (2025).
Abstract:
In this work, we demonstrate vertical GaN pn-diodes for high voltage applications initially grown and processed on 4" sapphire substrates and then trans- ferred to 4" tungsten substrates to achieve a fully vertical conduction path. Laser lift-off was used to separate the GaN-membrane device structures from the initial sapphire substrate. The diodes show improved forward conduction after the transfer process with on-state resistance reduced from 1.52 ± 0.05 mΩ·cm2 to 1.15 ± 0.05 mΩ·cm2 and the blocking strength is not heavily compromised with its mean value reduced from 1015 ± 47 V to 988 ± 57 V. High device yields of the membrane transfer procedure underscores this cost-competitive vertical GaN device technology for high-power applications without the need of expensive GaN substrates.
1 Ferdinand-Braun-Institut (FBH), 12489 Berlin, Germany
2 Fraunhofer Institute for Laser Technology, 52074 Aachen, Germany
3 EV Group, 4782 Sankt Florian am Inn, Austria
Index Terms:
Gallium nitride, GaN, vertical, pn-diode, GaN-on-tungsten.
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