New Electron Beam Lithography Tool at FBH

FBH research: 16.07.2010

New e-beam SB251 at FBH

150 nm T-gate generated with direct write e-beam technology

In June 2010, the new Vistec SB251 electron beam lithography system (e-beam) passed all FBH specific acceptance tests in due time. The shaped beam system allows direct write applications with a minimum feature size of down to <50 nm on up to 8 inch wafers. It provides the technological basis for further development of state-of-the-art devices.

Specific tests demonstrated the capability of the system for gate technologies of high-power transistors and for grating technologies of opto-electronical devices. Based on FBH’s technology 50 nm wide metal lines were generated by metal lift-off and T-gates with a foot width of 150 nm were demonstrated. Gratings with 70 nm line width (lines and spaces) were processed using one of FBH’s standard resist process.

Before moving in the e-beam system, very demanding installation requirements concerning temperature stability, magnetic disturbances, and mechanical vibrations had to be ensured. For preparing these superior environmental conditions, substantial reconstruction took place in fall 2009, including a complete shut-down of the cleanroom to build a new foundation and to modernize the air-conditioning system. Early in December 2009, the e-beam was moved into the cleanroom. After passing all standard acceptance tests in April 2010, the SB251 has been used for photomask writing.

FBH research: 16.07.2010