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  3. IWN 2024

IWN 2024

Conference: 03.-08.11.2024, O'ahu, Hawai'i

The FBH presents latest research results in several contributions at the 12th International Workshop on Nitride Semiconductors.

  • Advances in the epitaxial growth of heterostructures for far-ultraviolet C light emitting diodes
  • Investigation of emission characteristics and carrier injection of far-UVC light emitting diodes with emission wavelength between 218 nm and 242 nm
  • Quantitative analysis of graded AlGaN hole injection layer in 233 nm UV-C LED structure with optical in-situ metrology
  • Stretching VCSELs to the deep-ultraviolet
  • Origin of the parasitic luminescence of 235 nm UVC LEDs
  • Compensating defects in AlN due to silicon and oxygen bulk diffusion

Please refer to the conference website for more information.