IWN 2024

Das FBH präsentiert beim 12th International Workshop on Nitride Semiconductors neueste Forschungsergebnisse in zahlreichen Beiträgen.

• Advances in the epitaxial growth of heterostructures for far-ultraviolet C light emitting diodes
• Investigation of emission characteristics and carrier injection of far-UVC light emitting diodes with emission wavelength between 218 nm and 242 nm
• Quantitative analysis of graded AlGaN hole injection layer in 233 nm UV-C LED structure with optical in-situ metrology
• Stretching VCSELs to the deep-ultraviolet
• Origin of the parasitic luminescence of 235 nm UVC LEDs
• Compensating defects in AlN due to silicon and oxygen bulk diffusion

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