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Vertical power devices with thick GaN layers on sapphire

Source: compoundsemiconductor.net 06.12.2024

Dominating the headlines of our industry are the vast sums spent on building new SiC fabs and expanding the capacity in existing facilities. In general, such efforts are directed at increasing production of 1.2 kV MOSFETs, a key component in electric vehicles that is helping to maximise their range.
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