A Highly Linear Single-Balanced Resistive X-band MMIC Mixer in GaN HEMT Technology
T.K. Johansen1, F. Schnieder2, B. Janke2, O. Bengtsson2, A. Wentzel2, W. Heinrich2
Published in:
25th International Microwave and Radar Conference (MIKON), Wroclaw, Poland, Jul. 1-4, ISBN 978-83-969726-1-3, pp. 22-25 (2024).
Abstract:
In this paper a highly linear X-band MMIC mixer implemented in a 0.25 µm GaN HEMT technology is presented. The mixer is based on a single-balanced resistive architecture using a pair of symmetrical 4 × 125 µm GaN HEMTs. A novel minituarized half-wavelength hair-pin type of balun creates the balanced LO signal to be fed to the gates. A lumped-element diplexer network is used to separate the IF and RF signals at the drains. The fabricated MMIC mixer demonstrates a 6.9 dB conversion loss at 10 GHz with an LO power of +24.6 dBm and a bandwidth from 7.8-12.2 GHz. Over the same bandwidth the single-tone second and third-order spurious responses are below -66 dBm and -98 dBm, respectively, at an RF input power level of -10 dBm. The experimental results furthermore show that the two-tone third-order input intercept point (IIP3) reaches ∼30 dBm at an applied LO power of +24.6 dBm.
1 DTU Space, Technical University of Denmark, Kgs. Lyngby, Denmark
2 Ferdinand Braun Institut (FBH), Leibniz Inst. für Höchstfrequenztechnik, Berlin, Germany
Index Terms:
Galium nitride (GaN), linearity, monolithic microwave integrated circuit (MMIC), mixers.
©2024 Warsaw University of Technology
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