GaAs Based Edge Emitters at 626 nm, 725 nm and 1180 nm
F. Mauerhoff, P. Hildenstein, A. Maaßdorf, D. Feise, N. Werner, J. Glaab, G. Blume, and K. Paschke
Published in:
IEEE J. Sel. Top. Quantum Electron., vol. 31, no. 2: Pwr. and Effic. Scaling in Semiconductor Lasers, art. 1500710 (2025).
Abstract:
GaAs-based semiconductor lasers with emission wavelengths around 626 nm, 725 nm and 1180 nm are challenging due to the necessary strain in the quantum well region. However, there is a lively interest worldwide in tapping into these wavelength ranges with semiconductor lasers. Here we describe the fabrication and properties of both broad area and ridge waveguide semiconductor lasers emitting at 626 nm, 725 nm and 1180 nm. For that, GaAs-based laser structures with highly strained quantum wells have been developed.
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
Index Terms:
Diode lasers, semiconductor lasers, quantum well lasers, AlGaInP, GaInP, GaAsP, InGaAs.
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