Novel monolithically integrated bidirectional GaN HEMT
C. Kuring1, O. Hilt2, J. Böcker1, M. Wolf2, S. Dieckerhoff1, J. Würfl2
Published in:
IEEE Energy Conversion Congress and Exposition (ECCE), Portland, USA, Sep. 23-27, pp. 876-883 (2018).
Abstract:
Lateral chip architecture of GaN power semiconductors enables design of a monolithically integrated GaN HEMT featuring bidirectional blocking capability. The proposed bidirectional GaN HEMT allows for substantially reduced conduction losses in applications such as the multilevel T-type inverter which benefit from power semiconductors with bidirectional voltage blocking capability. In static and dynamic characterizations, the monolithically integrated bidirectional GaN HEMT exhibits similar switching and on-state behavior like conventional unidirectional GaN HEMTs.
1 Chair of Power Electronics Technische Universität Berlin, Einsteinufer 19, 10587 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Copyright © 2018 IEEE - All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Full version in pdf-format.