E. Brusaterra, E. Bahat Treidel, F. Brunner, M. Wolf, A. Thies, J. Würfl, and O. Hilt

Published in:

IEEE Electron Device Lett., vol. 44, no. 3, pp. 388-391 (2023).

Abstract:

We optimized gallium nitride drift layers for high voltage and low resistance vertical electronic devices by tuning the doping concentration for a given thickness of 5 µm. The optimization procedure is based on an empirical mobility model in order to maximize the corresponding device’s power figure-of-merit with respect to the drift layers parameters. We demonstrate quasi-vertical gallium-nitride based avalanche and punch-through pn-diodes grown on sapphire substrates and we compare the results to the theoretical breakdown voltage values as a function of the drift region doping concentration and thickness. We report on a pn-diode with 545 V avalanche breakdown voltage and a specific resistance of 0.34 mΩ cm² resulting in a power figure-of-merit of 874 MW / cm² and a punch-through pn-diode with 920 V breakdown voltage, specific resistance of 0.57 mΩ cm² resulting in a power figure-of-merit of 1.48 GW / cm².

Index Terms:

Gallium Nitride, GaN, vertical, pn-Diode, diode, drift Layer, avalanche, punch-through.

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