Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices
J. Würfl1, T. Palacios2, H. Grace Xing3, Y. Hao4, and M. Schubert5
Published in:
Appl. Phys. Lett., vol. 125, no. 7, pp. 070401, doi:1063/5.0221783 (2024).
1 Ferdinand-Braun-Institut GmbH (FBH), Gustav-Kirchhoff-Straße 4,12489 Berlin, Germany
2 Massachusetts Institute of Technology (MIT), 77 Massachusetts Avenue, RM 39-567A, Cambridge, Massachusetts 02139, USA
3 College of Engineering, Cornell University, Ithaca, New York 14850, USA and Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan
4 State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, People‘s Republic of China
5 Universityof Nebraska-Lincoln, Lincoln, Nebraska 68588-0511, USA and NanoLund, Lund University, P0. Box 118, 22100 Lund, Sweden
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