Newly published: frequent on ultra-widebandgap semiconductor devices

The current frequent issue focuses on recent FBH developments based on wide-bandgap and ultra-widebandgap semiconductors - and their important role in reducing the energy consumption of modern systems and preserving resources. The topics include:

• Aluminum nitride (AlN) - devics for fast power switiching
• Gallium oxide (Ga₂O₃) - novel material for high voltages
• Gallium nitride (GaN) - vertical devices for high power

Click here for the current issue