970 nm DBR Broad-Area Semiconductor Lasers with 60% Conversion Efficiency
P. Crump, Md. J. Miah, J. Fricke, M. Wilkens, S. Kreutzmann, H. Wenzel, and A. Knigge
Published in:
27th International Semiconductor Laser Conference (ISLC), Potsdam, Germany, Oct. 10-14, ISBN 978-1-6654-4133-9, WP3.6 (2021).
Abstract:
Progress in epitaxial design to enhance power and efficiency of spectrally-stabilized broad-area lasers at operating wavelength 970nm is presented. 200µm wide and 4mm long DBR lasers with a highly-asymmetric epitaxy provide 14W CW-mode power at 60% efficiency with 0.6nm spectral width (95% power).
Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
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