A 95 GHz Bandwidth 12 dBm Output Power Distributed Amplifier in InP-DHBT Technology for Optoelectronic Applications
T. Shivan1, N. Weimann4, M. Hossain1, T. Johansen2, D. Stoppel1, S. Schulz1, O. Ostinelli3, R. Doerner1, C.R. Bolognesi3, V. Krozer1, W. Heinrich1
Published in:
11th German Microwave Conference (GeMiC 2018), Freiburg, Germany, Mar. 12-14, ISBN 978-3-9812668-8-7, pp. 17-20 (2018).
Abstract:
This paper presents a DC-95 GHz distributed amplifier (DA) based on an InP/GaAsSb/InP 800 nm DHBT technology. The circuit employs five cascode unit cells with 0.8 µm × 6 µm HBTs. To obtain flat small-signal gain and group delay characteristics, inductive peaking is used at the collector of the common-base transistor. The amplifier exhibits 12 dB gain from 1-100 GHz, with S11 and S22 below -10 dB throughout the frequency range. DC consumption is only 126 mW and group delay remains below 20 ps up to 65 GHz. The simulated saturated output power reaches 12 dBm with a variation of ±0.75 dB across the entire band of operation. This performance is very useful in high-speed, ultra-low power optical systems.
1 Ferdinand-Braun-Institut, Leibniz-Insitut für Hoechstfrequenztechnik (FBH), Berlin, Germany
2 Technical University of Denmark, Kgs. Lyngby, Denmark
3 ETH Zurich, Zurich, Switzerland
4 Universität Duisburg-Essen, Duisburg, Germany
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