K. Tetzner, A. Thies, E. Brusaterra, A. Külberg, P. Paul, I. Ostermay, J. Würfl, and O. Hilt

Published in:

Appl. Phys. Lett., vol. 126, no. 6, pp. 062105, doi:10.1063/5.0253992 (2025).

Abstract:

In this work, we report on the fabrication of all-implanted b-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) devices on semi-insulating (-201) β-Ga₂O₃ substrates. Through the use of multiple energy Si⁺ implantation and subsequent annealing, we were able to achieve high activation efficiencies up to 87% allowing to realize the active transistor channel and Ohmic contact regions with electrical properties comparable to homoepitaxial layers grown by metal-organic chemical vapor deposition. The fabricated β-Ga₂O₃ MOSFET devices featured excellent current modulation with on/off current ratios up to 10⁹, maximum drain current densities of 180 mA/mm, and specific on-resistances of 1.5 mΩcm². Furthermore, breakdown measurements in air of the non-field-plated MOSFET devices with a gate-to-drain distance of 2 µm showed a catastrophic breakdown at 332 V, which equals an average breakdown strength of 1.7 MV/cm. The outcome of this work emphasizes the high potential of this all-implantation approach for fabricating high-performing Ga₂O₃-based electronic devices for next-generation power electronics applications without the need of sophisticated high-quality epitaxial growth.

Topics:

Electrical properties and parameters, Electronic devices, Field effect transistors, Power electronics, Ohmic contacts, Semiconductor device fabrication, Atomic layer deposition, Oxides

© 2025 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
Rightslink® by Copyright Clearance Center

Full version in pdf-format.