Experimental studies of GaAs-based broad area diode lasers using highly asymmetric epitaxial structures with high modal gain: finding a path to exceeding 80% conversion efficiency at 25°C
P. Crump1, A. Boni2,1, M. Elattar1, S. Khamari3, I.P. Marko4, S.J. Sweeney4,1, S. Arslan1, B. King1, M.J. Miah5,1, D. Martin1, A. Knigge1, P. Della Casa1, G. Tränkle1
Published in:
Proc. of SPIE, vol. PC13385, Novel In-Plane Semiconductor Lasers XXIV, Photonics West, San Francisco, USA, Jan 17-22, PC133850V (2025).
1 Ferdinand-Braun-Institut (FBH), Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 Lumics GmbH (Germany)
3 Raja Ramanna Ctr. for Advanced Technology (India)
4 Univ. of Glasgow (United Kingdom)
5 Bangladesh Univ. of Engineering and Technology (Bangladesh)
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