Extreme Triple Asymmetric (ETAS) Epitaxial Designs for Increased Efficiency at High Powers in 9xx-nm Diode Lasers
T. Kaul, G. Erbert, A. Maaßdorf, D. Martin, P. Crump
Published in:
Proc. SPIE 10514, High-Power Diode Laser Technology XVI, Photonics West, San Francisco, USA, Jan 27 - Feb 01, 105140A (2018).
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, D-12489 Berlin, Germany
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