Increasing Output Power in 970 nm Broad Area Lasers via Longitudinal Current Profile Modification
S.K. Khamari1, S. Arslan1, C. Zink1, S.J. Sweeney1,2 and P. Crump1
Published in:
29th International Semiconductor Laser Conference (ISLC 2024), Orlando, USA, Sep. 30 - Oct. 2, ISBN: 979-8-3503-7299-1, TuD4 (2024).
Abstract:
We show experimentally that the longitudinal temperature variation in high power GaAs-based diode lasers can be halved via a modified longitudinal current profile, using customized devices with segmented contacts. Lateral carrier accumulation at the front facet also halves, whereas peak power increases by 17 %.
1 Ferdinand-Braun-Institut (FBH), Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
2 James Watt School of Engineering, College of Science and Engineering, University of Glasgow, Glasgow, G12 8LT, UK
Keywords:
High power diode lasers, longitudinal temperature variation, carrier accumulation.
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