J.E. Boschker, D. Feise, U. Spengler, P. Ressel, K. Paschke, and A. Knigge

Published in:

IEEE Photonics J., vol. 17, no. 2, art. 1500904, doi:10.1109/JPHOT.2025.3542598 (2025).

Abstract:

High power, compact, red edge-emitting lasers based on GaInP quantum wells are desirable for applications such as laser display technologies or two-photon upconversion. Here, we investigate the influence of passivation methods on the performance of 635 nm ridge waveguide lasers. We demonstrate that vacuum cleaving results in a higher facet stability compared to hydrogen cleaning, resulting in a reliable output power for 7.5 µm wide emitters of 200 mW for one week and 160 mW for 2000 hours. Moreover, our investigation shows that it is essential to consider the thermal budget of passivation methods for the optimization of the laser performance of phosphide-based lasers.

Index Terms:

Diode lasers, reliability, semiconductor lasers, quantum well lasers.

© 2025 The Authors. This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License. For more information, see https://creativecommons.org/licenses/by-nc-nd/4.0/

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