Novel 1064 nm DBR lasers combining active layer removal and surface gratings
O. Brox, H. Wenzel, J. Fricke, P. Della Casa, A. Maaßdorf, M. Matalla, S. Wenzel, A. Wicht, and A. Knigge
Published in:
Electron. Lett., vol. 57, no. 14, pp. 559-561, doi:10.1049/ell2.12192 (2021).
Abstract:
The fabrication and characterisation details of novel distributed Bragg reflector (DBR) diode lasers emitting around 1064 nm are presented here. The AlGaAs epitaxial layer stack used here allows the removal of the active quantum wells in passive sections where no current is injected. The DBR lasers fabricated with a two-step epitaxial approach without an active layer in the grating sections show improved performance in terms of power, efficiency, and linewidth in comparison to its all-active DBR counterparts.
Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
Copyright © 2021 The Authors. Electronics Letters published by John Wiley & Sons Ltd on behalf of The Institution of Engineering and Technology
This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
Full version in pdf-format.