Versatile high power pulse-laser source for pico- and nanosecond optical pulses
A. Liero, A. Klehr, A. Knigge and W. Heinrich
Published in:
Eng. Res. Express, vol. 2, no. 1, pp. 015023, doi:10.1088/2631-8695/ab5be5 (2020).
Abstract:
This paper presents a pulse-laser source for the generation of ps and ns laser pulses with more than 50 W peak output power. The final stages of the drivers use GaN transistors and are capable of switching currents of 0.8 A with 200 ps minimum pulse width and 50 A with 3 ns minimum pulse width. The pulses can be externally triggered by ECL logic. Both single-pulse and pulse train modes are possible.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
Keywords:
picosecond laser source, GaN HEMT, fast current driver, optical pulse gating, mode locking.
Copyright © 2020 IOP Publishing Ltd.
Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence.
Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Full version in pdf-format.