Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
R. Bege, D. Jedrzejczyk, G. Blume, J. Hofmann, D. Feise, K. Paschke, and G. Tränkle
Published in:
Opt. Lett., vol. 41, no. 7, pp. 1530-1533 (2016).
Abstract:
A DBR tapered diode laser in continuous wave operation was used to generate second-harmonic radiation at 589 nm in a PPMgO:LN ridge waveguide crystal. An optical output power of 0.86 W at an optical-to-optical and an electrical-to-optical efficiency of 42% and 11%, respectively, was achieved. The visible radiation was characterized by a spectral bandwidth ΔνFWHM of 230 MHz and a beam propagation parameter M21/e2 better than 1.1. The integration of such a system into a housing of a small footprint will enable a portable and highly efficient module featuring a visible output power in the watt-level range.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
OCIS codes:
(140.2020) Diode lasers; (140.3515) Lasers, frequency doubled; (140.7300) Visible lasers; (160.3730) Lithium niobate; (230.4320) Nonlinear optical devices; (230.7380) Waveguides, channeled.
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