H.K. Cho, I. Ostermay, T. Kolbe, J. Rass, and S. Einfeldt

Published in:

ECS J. Solid State Sci. Technol., vol. 13, no. 9, pp. 093009 (2024).

Abstract:

The feasibility of replacing the V/Al/Ni/Au contact on n-Al_0.85Ga_0.15N:Si commonly used in far-UVC LEDs with a Au-free V/Al/Pt contact has been investigated. It is shown that the V and Pt layer thicknesses play an important role for achieving a low contact resistivity and a smooth contact surface at a low annealing temperature. The specific contact resistivity of V(10 nm)/Al(120 nm)/Pt (40 nm) annealed at 700 °C for 5 min is comparable with that of V(15 nm)/Al(120 nm)/Ni(20 nm)/Au(30 nm) annealed at 850 °C for 30 s. Furthermore, the root mean square roughness of the optimized V/Al/Pt contacts was 8.3 nm as compared to 30 nm for V/Al/Ni/Au.

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