T. Shivan¹, M. Hossain¹, R. Doerner¹, T.K. Johansen², K. Nosaeva¹, H. Yacoub¹, W. Heinrich¹ and V. Krozer^1,3

Published in:

IEEE MTT-S Int. Microw. Symp. Dig., Los Angeles, USA, Aug. 4-6, Virtual Event, ISBN 978-1-7281-6815-9, pp. 401-404 (2020).

Abstract:

This work reports on a highly linear and high output power ultra-wideband distributed amplifier with improved thermal properties using a diamond layer for heat spreading. The performances of a circuit with and without the diamond heat spreader are compared. Adding the diamond yields a 4 dB improvement in 1 dB compression point (P_1dB) and saturated output power (P_sat). Intermodulation distortion has also been measured and the amplifier achieves 24 dBm OIP3 over a bandwidth larger than 60 GHz. In terms of small-signal characteristics, the circuit shows 12 dB gain and low deviation from linear phase, similarly to the non-diamond version. This amplifier demonstrates highest P_1dB, OIP3, and PAE values as compared to other technologies with similar or higher bandwidth.

Keywords:

distributed amplifier, InP double heterojunction bipolar transistor (DHBT), monolithic microwave integrated circuit (MMIC), travelling wave amplifier.

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